Product Category:Bipolar Transistors - BJT Configuration:Single Transistor Polarity:NPN Collector- Base Voltage VCBO:700 V Collector- Emitter Voltage VCEO Max:400 V Emitter- Base Voltage VEBO:9 V Maximum DC Collector Current:12 A Gain Bandwidth Product fT:4 MHz Maximum Operating Temperature:+ 150 C Mounting Style:Through Hole Package/Case:TO-3P Brand:Fairchild Semiconductor DC Collector/Base Gain hFE Min:8 DC Current Gain hFE Max:8 Minimum Operating Temperature:- 65 C Pd - Power Dissipation:130000 mW Series:KSE13009
